| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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43,429 pcs
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43429 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
628 pcs
|
628 pcs | On Request | 1 | On Request | On Request | 1205+ | On Request | On Request |
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The Toshiba TK4A60DA is an N-Channel MOSFET suitable for switching regulator applications. This component features a high drain-source voltage rating of 600V and a continuous drain current of 3.5A.
Key electrical characteristics include a low drain-source ON-resistance of 1.7 Ohms (typical) at VGS = 10V and ID = 1.75A, and a high forward transfer admittance of 2.2 S (typical). The leakage current is low, rated at 10 μA at 600V. The gate threshold voltage ranges from 2.4V to 4.4V.
The MOSFET is housed in a TO220SIS package, designed for through-hole mounting. Its specifications make it a suitable choice for power supply designs and other switching applications requiring reliable performance and efficient operation.
600V
3.5A
1.7 Ω (VGS = 10 V, ID = 1.75 A)
2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
TO220SIS
2.2 S (VDS = 10 V, ID = 1.75 A)
10 µA maximum (VDS = 600 V)