TK4A60D(STA4,Q,M) The Toshiba TK4A60D(STA4,Q,M) is an N-Channel MOSFET designed for power applications. It offers a 600V drain-source breakdown voltage and a continuous drain current of 4A.
Mfr Part #:

TK4A60D(STA4,Q,M)

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK4A60D(STA4,Q,M) is an N-Channel MOSFET designed for power applications. It offers a 600V drain-source breakdown voltage and a continuous drain current of 4A.
✓ Total Stock: 2,002 pcs
$ Price Range: $2.56

TK4A60D(STA4,Q,M) Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,002 pcs
2002 pcs On Request 1 On Request On Request 23+ On Request On Request

TK4A60D(STA4,Q,M) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Style
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Product Type
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Transistor Type
Vgs (Max)
Vgs(th) (Max) @ Id

TK4A60D(STA4,Q,M) Description

Short technical summary and product information.

The Toshiba TK4A60D(STA4,Q,M) is a single N-Channel MOSFET from the TK4A60D series. It features a drain-source breakdown voltage of 600V and a continuous drain current of 4A at a case temperature.

 

Key electrical characteristics include a maximum on-resistance of 1.7 Ohms at 2A and 10V, a maximum gate charge of 12 nC at 10V, and an input capacitance of 600 pF at 25V. The gate-to-source voltage has a maximum rating of ±30V, with a gate threshold voltage of 4.4V at 1mA. The device is rated for a maximum power dissipation of 35W (Tc).

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is available in a TO-220SIS package, suitable for through-hole mounting. The technology used is MOSFET (Metal Oxide) silicon.

 

Toshiba is a recognized manufacturer of power semiconductors, and this MOSFET is suitable for various power switching and control applications where high voltage and moderate current handling are required.

TK4A60D(STA4,Q,M) Quick Information

Product Type: MOSFET
Series: TK4A60D
Canonical Name: Toshiba TK4A60D(STA4,Q,M) N-Channel MOSFET
Subcategory: MOSFETs

TK4A60D(STA4,Q,M) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK4A60D(STA4,Q,M) Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK4A60D(STA4,Q,M) Features

  • 600V drain-source breakdown voltage.
  • 4A continuous drain current.
  • 1.7 Ohm maximum on-resistance.
  • N-Channel MOSFET technology.
  • TO-220SIS package for through-hole mounting.

TK4A60D(STA4,Q,M) Applications

  • Suitable for power switching circuits.
  • Used in power supply applications.
  • Ideal for motor control systems.
  • Applicable in general purpose power conversion.

TK4A60D(STA4,Q,M) FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the TK4A60D(STA4,Q,M)?

The drain-source breakdown voltage is 600V.

What is the continuous drain current for the TK4A60D(STA4,Q,M)?

The continuous drain current is 4A.

What is the maximum on-resistance of the TK4A60D(STA4,Q,M)?

The maximum on-resistance is 1.7 Ohms at 2A and 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the TK4A60D(STA4,Q,M) supplied in?

It is supplied in a TO-220SIS package.

Is the TK4A60D(STA4,Q,M) RoHS compliant?

The RoHS Status is RoHS3 Compliant.

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