| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,294 pcs
|
3294 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
950 pcs
|
950 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Toshiba TK4A60D is a high-performance N-Channel MOSFET. It offers a drain-source breakdown voltage of 600V and a continuous drain current of 4A, making it suitable for various power switching applications.
This MOSFET has a low drain-source on-resistance of 1.7 Ohms, contributing to efficient power transfer and reduced heat generation. It is constructed using Silicon (Si) technology and operates as a single N-Channel transistor.
The TK4A60D is housed in an SMD/SMT mountable SC-62-3 package, facilitating integration into compact electronic designs. Its dimensions are 10mm in length, 4.5mm in width, and 15mm in height. The device is part of the TK4A60D series.
This component is manufactured by Toshiba and is designed for reliable performance in demanding environments.
SC-62-3 SMD package.
600V.
4A.
1.7 Ohms.
N-Channel.
SMD/SMT.
Height 15 mm, length 10 mm, width 4.5 mm.