| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,000 pcs
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7000 pcs | On Request | 1 | On Request | On Request | 1221+PB | On Request | On Request |
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The Toshiba TK45J60V is a Silicon N-Channel MOS FET utilizing DTMOS technology. It is designed for applications such as switching voltage regulators.
Key electrical characteristics include a low drain-source on-resistance of 0.055 Ω (typ.) and a gate threshold voltage ranging from 2.5 to 3.5 V. The device supports a continuous drain current of 45A and a pulsed drain current of 90A, with a maximum power dissipation of 370W at 25°C case temperature.
Absolute maximum ratings specify a drain-source voltage of 600V and a gate-source voltage of ±30V. The channel temperature is rated up to 150°C, with a storage temperature range of -55 to 150°C. Thermal resistance from channel to case is 0.338 °C/W.
The component is housed in a TO-3P(N) package, suitable for through-hole mounting. It is important to manage continuous operation under heavy loads to ensure product reliability.
The maximum drain-source voltage is 600 V.
The typical drain-source on-resistance is 0.055 Ω.
The continuous drain current is 45 A.
The package type is TO-3P(N).
The maximum channel temperature is 150 °C.