TK40S10K3Z(T6L1,NQ The Toshiba TK40S10K3Z(T6L1,NQ is an N-Channel MOSFET with a 100V drain-to-source voltage and a 40A current rating. It is housed in a TO-252 surface mount package.
Mfr Part #:

TK40S10K3Z(T6L1,NQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK40S10K3Z(T6L1,NQ is an N-Channel MOSFET with a 100V drain-to-source voltage and a 40A current rating. It is housed in a TO-252 surface mount package.
✓ Total Stock: 25 pcs
$ Price Range: $2.56

TK40S10K3Z(T6L1,NQ Available from 1 distributor

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TK40S10K3Z(T6L1,NQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TK40S10K3Z(T6L1,NQ Description

Short technical summary and product information.

This Toshiba TK40S10K3Z(T6L1,NQ is an N-Channel MOSFET designed for power applications. It offers a maximum drain-to-source voltage (Vdss) of 100V and can handle a continuous current of 40A (Ta). The MOSFET features a low on-resistance (Rds On) of 18mOhm at 20A and 10V gate-source voltage, ensuring efficient power transfer.

 

With a maximum power dissipation of 93W (Tc) and an operating temperature range up to 175°C (TJ), this device is suitable for demanding environments. The input capacitance (Ciss) is 3110 pF at 10V, and the gate charge (Qg) is 61 nC at 10V.

 

The component utilizes Metal Oxide Semiconductor (MOSFET) technology and is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount configuration. This mounting type is ideal for automated assembly processes and space-constrained designs.

 

Key electrical parameters include a gate threshold voltage (Vgs(th)) of 4V at 1mA and a maximum gate-source voltage (Vgs) of ±20V. The TK40S10K3Z(T6L1,NQ is RoHS3 compliant.

TK40S10K3Z(T6L1,NQ Quick Information

Product Type: MOSFET
Canonical Name: TK40S10K3Z(T6L1,NQ N-Channel MOSFET
Subcategory: Single

TK40S10K3Z(T6L1,NQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK40S10K3Z(T6L1,NQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK40S10K3Z(T6L1,NQ Features

  • 100V drain-to-source voltage rating.
  • 40A continuous current capability.
  • Low 18mOhm on-resistance.
  • TO-252 surface mount package.
  • High operating temperature up to 175°C.

TK40S10K3Z(T6L1,NQ Applications

  • Used in power supply circuits.
  • Suitable for DC-DC converters.
  • Ideal for motor driver circuits.
  • Applicable to battery protection circuits.

TK40S10K3Z(T6L1,NQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the TK40S10K3Z?

The maximum drain-to-source voltage is 100 V.

What is the maximum continuous drain current of this Toshiba MOSFET?

The maximum drain current is 40 A at ambient temperature.

What is the on-resistance of the TK40S10K3Z at 10V gate drive?

The maximum on-resistance is 18 mΩ at Id = 20A, Vgs = 10V.

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 4 V at Id = 1mA.

What package is the TK40S10K3Z available in?

The package is TO-252-3, DPak (2 Leads + Tab), SC-63; supplier device package is DPAK+.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

What is the maximum gate charge at 10V gate-source voltage?

The maximum gate charge is 61 nC at Vgs = 10V.

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