TK40P04M1 The TK40P04M1 by Toshiba is an N-Channel power MOSFET rated for 40V drain-source voltage and 40A continuous drain current. It features low on-resistance of 11mOhm at 20A and comes in a surface-mount TO-252 package.
Mfr Part #:

TK40P04M1

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The TK40P04M1 by Toshiba is an N-Channel power MOSFET rated for 40V drain-source voltage and 40A continuous drain current. It features low on-resistance of 11mOhm at 20A and comes in a surface-mount TO-252 package.
✓ Total Stock: 183,411 pcs
$ Price Range: $2.81

TK40P04M1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
139,077 pcs
139077 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
44,334 pcs
44334 pcs On Request 1 On Request On Request 2018+ On Request On Request

TK40P04M1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TK40P04M1 Description

Short technical summary and product information.

The TK40P04M1 from Toshiba is an N-Channel power MOSFET built on the U-MOSVI-H process. It has a maximum drain-source voltage rating of 40V and a continuous drain current rating of 40A at 25°C ambient temperature. The device is intended for high-efficiency power switching and is supplied in a surface mount TO-252-3 (DPak, SC-63) package.

 

Electrical characteristics include a maximum on-resistance of 11mOhm at 20A with 10V gate drive, and a maximum gate threshold voltage of 2.3V at 200μA. Maximum gate charge is 29nC at 10V, and maximum input capacitance is 1920pF at 10V. The gate-source voltage rating is ±20V. Power dissipation is rated at 47W at case temperature, with a maximum junction temperature of 150°C.

 

The TO-252-3 package is surface-mountable and supports automated assembly. The part is supplied in tape and reel packaging for volume production.

TK40P04M1 Quick Information

Product Type: MOSFET
Series: U-MOSVI-H
Canonical Name: Toshiba TK40P04M1 N-Channel MOSFET
Subcategory: Single MOSFET

TK40P04M1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK40P04M1 Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK40P04M1 Features

  • N-channel MOSFET rated for 40V.
  • 40A continuous drain current at 25C.
  • Low 11mOhm on-resistance at 20A.
  • Maximum junction temperature of 150C.
  • Surface mount TO-252-3 package.

TK40P04M1 Applications

  • For DC-DC converter switching applications
  • Used in battery protection circuits
  • Suitable for load switch designs
  • Ideal for motor drive control
  • Power management in portable devices

TK40P04M1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the TK40P04M1?

40V.

What is the continuous drain current rating?

40A at 25°C ambient temperature.

What is the on-resistance of the TK40P04M1?

Maximum 11mOhm at 20A drain current with 10V gate drive.

What is the gate threshold voltage?

Maximum 2.3V at 200μA drain current.

What is the gate charge of the TK40P04M1?

Maximum 29nC at 10V gate-source voltage.

What package does the TK40P04M1 use?

TO-252-3, also known as DPak (2 leads + tab) or SC-63, for surface mount.

What is the maximum operating junction temperature?

150°C.

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