| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90 pcs
|
90 pcs | On Request | 1 | On Request | On Request | 1136+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK40J20D,S1F(O is an N-Channel power MOSFET designed for high-efficiency switching applications. It features a drain-to-source voltage (Vdss) of 200V and a continuous drain current of 40A. The on-resistance (Rds(on)) is 44mOhm at 20A and 10V gate drive.
This device uses standard MOSFET (Metal Oxide) technology with a maximum gate charge of 100 nC at 10V and an input capacitance of 4300 pF at 100V drain-source. The gate-source voltage rating is ±20V, and the gate threshold voltage is 3.5V at 1mA.
Power dissipation is rated at 260W (case temperature), and the device can operate with a maximum junction temperature of 150°C. The MOSFET comes in a TO-3P-3 or SC-65-3 package, suitable for through-hole mounting in power circuits.
Typical applications include switch-mode power supplies, DC-DC converters, and motor drives where high voltage and current handling is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100 nC maximum at 10V.
4300 pF maximum at 100V dain-source.