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TK40E10N1,S1X The Toshiba TK40E10N1,S1X is an N-Channel MOSFET designed for power applications. It offers a 100V drain-source voltage and a continuous current rating of 90A.
Mfr Part #:

TK40E10N1,S1X

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK40E10N1,S1X is an N-Channel MOSFET designed for power applications. It offers a 100V drain-source voltage and a continuous current rating of 90A.
✓ Total Stock: 26,938 pcs
$ Price Range: $2.56

TK40E10N1,S1X Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
26,888 pcs
On Request
26888 pcs On Request 1 On Request On Request 18+ On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
50 pcs
On Request
50 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TK40E10N1,S1X Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TK40E10N1,S1X Description

Short technical summary and product information.

This Toshiba TK40E10N1,S1X is an N-Channel MOSFET belonging to the Metal Oxide Semiconductor Field-Effect Transistor family. It is designed for high-power applications, featuring a maximum drain-source voltage (Vdss) of 100V and a continuous drain current capability of 90A at a case temperature (Tc).

 

The MOSFET exhibits a low on-resistance (Rds On) of 8.2mOhm at 20A and 10V gate-source voltage, ensuring efficient power transfer. The gate charge (Qg) is 49nC at 10V, and the input capacitance (Ciss) is 3000pF at 50V. It operates within a temperature range of -55°C to 150°C (TJ).

 

Packaged in a standard TO-220-3 configuration, this component is designed for through-hole mounting. The maximum power dissipation is rated at 126W (Tc). The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

 

This MOSFET is suitable for various power switching and control applications where high current and voltage handling are required. Its through-hole mounting makes it convenient for integration into many circuit designs.

TK40E10N1,S1X Quick Information

Product Type: MOSFET
Canonical Name: TK40E10N1,S1X N-Channel MOSFET
Subcategory: N-Channel

TK40E10N1,S1X Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK40E10N1,S1X Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK40E10N1,S1X Features

  • 100V drain-source voltage rating.
  • 90A continuous current capability.
  • Low 8.2mOhm on-resistance.
  • TO-220 package for through-hole mounting.
  • RoHS3 compliant for environmental standards.

TK40E10N1,S1X Applications

  • Ideal for high-power switching.
  • Suitable for DC-DC converters.
  • Used in power supply circuits.
  • Applicable in motor control systems.

TK40E10N1,S1X FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

100V.

What is the package type?

TO-220-3 through-hole package.

What is the maximum junction temperature?

150°C.

What is the continuous drain current?

90A at case temperature.

What is the on-resistance?

8.2mOhm at 20A drain current and 10V gate voltage.

What is the gate charge?

49nC at 10V gate voltage.

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