| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,899 pcs
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6899 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
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The Toshiba TK40A10J1 is a Silicon N-Channel MOSFET designed for various electronic applications. This component operates with a maximum Drain-Source Voltage of 100V and exhibits a typical Drain-Source Resistance of 8.2mΩ.
With a maximum power dissipation rating of 35W, the TK40A10J1 is suitable for applications requiring moderate power handling. The device operates within a temperature range of up to 150°C, ensuring reliability in demanding environments. It is housed in a standard TO-220AB package, which is commonly used for power semiconductor devices and facilitates through-hole mounting.
This MOSFET is manufactured by Toshiba and is part of their extensive line of semiconductor products. Its specifications make it a versatile component for switching and amplification circuits in power management and general-purpose electronic designs.
The maximum Drain-Source Voltage is 100V.
The typical Drain-Source Resistance is 8.2mΩ.
The maximum power dissipation is 35W.
The maximum operating temperature is 150°C.
The TK40A10J1 is in a TO-220AB package.
The TK40A10J1 has 3 terminals.