| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,900 pcs
|
10900 pcs | On Request | 1 | On Request | On Request | 1345+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TK40A06N1,S4X is an N-Channel MOSFET with a Metal Oxide semiconductor technology. It is rated for a maximum drain-source voltage (Vdss) of 60V and can handle a continuous drain current of 40A at a case temperature.
The MOSFET features a low on-resistance (Rds On) of 10.4mOhm maximum at 20A and 10V gate drive voltage. The gate charge (Qg) is 23 nC maximum at 10V, and the input capacitance (Ciss) is 1700 pF maximum at 30V.
Designed for through-hole mounting, this component comes in a TO-220SIS package. It operates within a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is 30W at the case temperature.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 40A.
The maximum on-resistance (Rds On) is 10.4mOhm when measured at 20A drain current and 10V gate-source voltage.
This MOSFET is supplied in a TO-220SIS package.
The operating temperature range is up to 150°C (TJ).
The RoHS status is listed as RoHS3 Compliant.
The Moisture Sensitivity Level is 1.