| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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40 pcs
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40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK3P50D,RQ(S is an N-Channel MOSFET belonging to the π-MOS technology family. It is designed for applications such as switching voltage regulators.
Key electrical characteristics include a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 3A at 25°C (Ta). The device offers a low drain-source on-resistance (RDS(ON)) of 3 Ohm (max) at 1.5A and 10V, and a typical RDS(ON) of 2.3 Ohm. The gate threshold voltage (Vth) ranges from 2.4V to 4.4V at 1mA.
Thermal performance is managed with a maximum channel temperature of 150°C and a power dissipation of 60W (Tc). The MOSFET is housed in a DPAK surface mount package (TO-252-3, DPak), suitable for various electronic designs.
Additional features include a gate-source voltage (Vgs) rating of ±30V, input capacitance (Ciss) of 280 pF (max) at 25V, and gate charge (Qg) of 7 nC (max) at 10V. The device also exhibits a low leakage current of 10 µA (max) at 500V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 500V.
Maximum continuous drain current is 3A at Ta=25°C; pulsed drain current is 6A.
Maximum drain-source on-resistance is 3Ω at ID=1.5A and VGS=10V. Typical on-resistance is 2.3Ω.
Gate threshold voltage is from 2.4V to 4.4V at VDS=10V and ID=1mA.
Maximum power dissipation is 60W at TC=25°C.
It is available in a TO-252-3 DPAK surface-mount package with 2 leads plus tab (SC-63).
Maximum channel temperature is 150°C; storage temperature range is -55°C to 150°C.