| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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217 pcs
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217 pcs | On Request | 1 | On Request | On Request | 1415+ | On Request | On Request |
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The Toshiba TK3P50D,RQ is a single N-Channel MOSFET belonging to the Metal Oxide Semiconductor (MOSFET) technology family. It is designed to handle a Drain to Source Voltage (Vdss) of up to 500V and can sustain a continuous drain current (Id) of 3A at 25°C. The device has a maximum power dissipation of 60W (Tc) and an operating temperature range of up to 150°C (TJ).
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4.4V (max) at 1mA, a maximum gate charge (Qg) of 7nC at 10V, and a maximum gate-source voltage (Vgs) of ±30V. The on-resistance (Rds On) is a maximum of 3 Ohm at 1.5A and 10V gate drive voltage. Input capacitance (Ciss) is rated at a maximum of 280pF at 25V.
This MOSFET is available in a surface mount DPAK package, also known as TO-252-3, DPak (2 Leads + Tab), or SC-63. It is supplied on tape and reel with a standard package quantity of 2000 units. The RoHS status is compliant with RoHS3 standards.
The drain-to-source voltage (Vdss) for the TK3P50D,RQ is 500V.
The continuous drain current (Id) at 25°C for the TK3P50D,RQ is 3A.
The maximum power dissipation for the TK3P50D,RQ is 60W (Tc).
The operating temperature range (TJ) for the TK3P50D,RQ is up to 150°C.
The TK3P50D,RQ is supplied in a surface mount DPAK package (TO-252-3, DPak (2 Leads + Tab), SC-63).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.