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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | 1530+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
The Toshiba TK3A60DA(STA4,Q,M) is a high-performance N-Channel MOSFET belonging to the π-MOSVII series. It is designed for power management applications and offers a drain-to-source voltage of 600V and a continuous drain current of 2.5A at 25°C.
Key electrical characteristics include a maximum on-resistance of 2.8 Ohms at 1.3A and 10V gate drive voltage, a maximum gate threshold voltage of 4.4V at 1mA, and a maximum gate charge of 9 nC at 10V. The input capacitance is rated at a maximum of 380 pF at 25V.
This MOSFET has a maximum power dissipation of 30W (Tc) and an operating temperature range of up to 150°C (TJ). It is housed in a TO-220SIS package and is designed for through-hole mounting.
The device is RoHS3 compliant and has an MSL rating of 1.
The drain-source voltage rating is 600V.
The continuous drain current is 2.5A at 25°C ambient temperature.
The maximum on-resistance is 2.8Ohm at 1.3A drain current and 10V gate drive.
It is available in a TO-220SIS through-hole package supplied in tubes.
The maximum operating junction temperature is 150°C.
The maximum gate threshold voltage is 4.4V at 1mA drain current.
The maximum gate charge is 9nC at 10V gate-source voltage.