| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Toshiba TK3A60DA is an N-Channel MOSFET from the π-MOSVII series, designed for efficient switching regulator applications. It features a high drain-source voltage rating of 600V and a continuous drain current of 2.5A at 25°C ambient temperature, with a maximum power dissipation of 30W at 25°C case temperature.
Key electrical characteristics include a low drain-source ON-resistance of 2.2 Ω (typ.) and a gate threshold voltage ranging from 2.4V to 4.4V. The MOSFET also exhibits a forward transfer admittance of 1.5 S (typ.) and various capacitance values such as input capacitance (Ciss) of 380 pF (max) and output capacitance (Coss) of 45 pF (typ.). Switching times are also specified, with rise time at 15 ns (typ.) and fall time at 7 ns (typ.).
This device is housed in a TO-220SIS package, suitable for through-hole mounting. The operating temperature range is up to 150°C, with a thermal resistance from channel to case of 4.17 °C/W. It is an electrostatic-sensitive device and requires careful handling.
600V.
TO-220SIS through-hole package.
150°C.
2.4V to 4.4V.
2.8Ω at VGS=10V, ID=1.3A.
9nC typical at VGS=10V.
380pF maximum at VDS=25V.