| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
250 pcs
|
250 pcs | On Request | 1 | On Request | On Request | 1444+ | On Request | On Request | |
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Toshiba, part number TK35S04K3L(T6L1,NQ, is suitable for various power management applications. It features a maximum drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 35A at 25°C.
The device offers a low maximum on-resistance (Rds On) of 10.3mOhm at 17.5A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 3V at 1mA, and the maximum gate-source voltage (Vgs) is ±20V. Input capacitance (Ciss) is rated at a maximum of 1370pF at 10V.
With a maximum power dissipation of 58W (Tc) and an operating junction temperature up to 175°C, this MOSFET is built for demanding thermal conditions. It utilizes Metal Oxide MOSFET technology and comes in a surface-mount DPAK+ package (TO-252-3, DPak).
Environmental compliance includes RoHS3 status. The component is supplied in Tape & Reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
DPAK+ surface mount package (TO-252-3, DPak, SC-63).
175°C.
35A at 25°C.
10.3 mOhm maximum at 17.5A, 10V.
3V maximum at 1mA.
58W.