| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | 0918+ | On Request | On Request |
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| FET Type | |
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This Toshiba TK35E10K3(S1SS-Q) is an N-Channel MOSFET designed for power switching applications. It offers a maximum drain-source voltage of 100V and can handle a continuous drain current of up to 35A at 25°C.
The MOSFET is housed in a standard TO-220AB package, making it suitable for through-hole mounting. This package type is common in power electronics for its thermal dissipation capabilities and ease of assembly.
Key electrical characteristics include its N-channel FET type, enabling efficient switching and power control in various electronic circuits. The component is part of Toshiba's discrete semiconductor offerings, specifically within the transistors and MOSFETs category.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100V.
The continuous drain current is 35A at 25°C.
It is an N-Channel MOSFET.
It is supplied in a TO-220-3 package.
It is mounted using the through-hole method.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.