| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,005 pcs
|
2005 pcs | On Request | 1 | On Request | On Request | 09+CN | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Mounting Type | |
| Package / Case | |
| Supplier Device Package |
The Toshiba TK35E10K3 is a single N-Channel MOSFET belonging to the FETs - Single family. It is housed in a TO-220-3 package and designed for through-hole mounting.
Key electrical specifications include a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 35A at 25°C. These characteristics make it suitable for power switching and amplification applications.
The component is supplied in a tube package. Further details regarding specific features, operating conditions, and performance parameters can be found in the manufacturer's documentation.
The drain-to-source voltage (Vdss) for the TK35E10K3 MOSFET is 100V.
The continuous drain current (Id) at 25°C for the TK35E10K3 is 35A.
The TK35E10K3 MOSFET is supplied in a TO-220-3 package.
The TK35E10K3 MOSFET is mounted using the through-hole method.
The TK35E10K3 MOSFET is packaged in a tube.