| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,082 pcs
|
1082 pcs | On Request | 1 | On Request | On Request | 16+12+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Failure Rate | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Package / Case | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from Toshiba, part number TK35E08N1, is designed for power management applications. It features a Drain to Source Voltage (Vdss) of 80V and can handle a continuous drain current (Id) of 55A at 25°C.
The device exhibits a low Rds On (Max) of 12.2mOhm at 17.5A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 300μA. Input capacitance (Ciss) is rated at a maximum of 1700pF at 40V.
With a maximum power dissipation of 72W (Tc) and an operating temperature range up to 150°C (TJ), this MOSFET is suitable for demanding environments. It is mounted using a Through Hole method and comes in a TO-220-3 package.
The TK35E08N1 belongs to the U-MOSVIII-H series and is classified as RoHS3 Compliant, MSL 1, and REACH Unaffected.
80V.
55A at 25°C case temperature.
12.2mOhm at 17.5A drain current and 10V gate-source voltage.
4V maximum at 300μA drain current.
150°C.
TO-220-3 (through-hole).