| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,483 pcs
|
3483 pcs | On Request | 1 | On Request | On Request | 1448+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Failure Rate | |
| Gate Charge | |
| Height | |
| Length | |
| Mounting Style | |
| Number of Channels | |
| Package / Case | |
| Power Dissipation | |
| Technology | |
| Width |
The Toshiba TK35A65W5 is an N-Channel MOSFET belonging to the Tk35a65w series. It features a drain-source breakdown voltage of 650V and a continuous drain current of 35A (Ta). The device has a low drain-source on-resistance of 80 mOhms and a gate-source threshold voltage of 3V.
This MOSFET operates within a temperature range of -55°C to +150°C and has a power dissipation of 50W (Tc). It is constructed using Silicon technology and is configured as a single enhancement-mode channel.
The TK35A65W5 is supplied in a TO-220-3 package suitable for through-hole mounting. The packaging is provided in tubes, with a factory pack quantity of 50 units. Its dimensions are 15mm in height, 10mm in length, and 4.5mm in width.
The drain-source breakdown voltage is 650 V.
The continuous drain current is 35 A.
The power dissipation is 50 W.
The Rds On is 80 mOhms.
The gate-source threshold voltage is 3 V.
The operating temperature range is -55°C to +150°C.
It is an N-Channel transistor.