| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,616 pcs
|
3616 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK31V60X,LQ is an N-Channel MOSFET belonging to the DTMOS-H series, utilizing a Super Junction Structure for enhanced performance. This device is suitable for switching voltage regulators and other power switching applications.
Key electrical characteristics include a maximum drain-source voltage of 600V and a continuous drain current of 30.8A. The on-resistance (Rds On) is a maximum of 98mOhm at 9.4A and 10V gate-source voltage, with a typical value of 0.078 Ohm. The gate threshold voltage (Vgs(th)) is a maximum of 3.5V at 1.5mA.
This MOSFET offers high-speed switching properties due to lower capacitance. It operates with a gate-source voltage of up to ±30V and requires a drive voltage of 10V for its specified Rds On. The maximum power dissipation is 240W (Tc).
The device is packaged in a 4-DFN-EP (8x8) surface mount package, specifically a 4-VSFN Exposed Pad. The operating temperature range is up to 150°C (TJ), with a storage temperature range of -55 to 150°C. The channel-to-case thermal resistance is 0.52°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 600V.
The package is DFN8x8 (4-DFN-EP with exposed pad).
The channel temperature can go up to 150°C, and the storage temperature range is -55°C to 150°C.
It is an N-Channel MOSFET.
The maximum gate-source voltage is ±30V.
The maximum continuous drain current is 30.8A, and pulsed drain current is 123A.
The maximum on-resistance is 98mOhm at 9.4A drain current and 10V gate-source voltage.