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TK31V60W5,LVQ The Toshiba TK31V60W5,LVQ is an N-Channel MOSFET designed for 600V operation. It offers a continuous drain current of 30.8A and a maximum Rds On of 109mOhm.
Mfr Part #:

TK31V60W5,LVQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK31V60W5,LVQ is an N-Channel MOSFET designed for 600V operation. It offers a continuous drain current of 30.8A and a maximum Rds On of 109mOhm.
✓ Total Stock: 500 pcs
$ Price Range: $2.56

TK31V60W5,LVQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
Non-Authorised Inventory information
500 pcs
On Request
500 pcs On Request 1 On Request On Request 2126 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TK31V60W5,LVQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TK31V60W5,LVQ Description

Short technical summary and product information.

This Toshiba TK31V60W5,LVQ is an N-Channel MOSFET with a drain-source voltage rating of 600V. It is designed for surface mount applications and comes in a 4-DFN-EP (8x8) package.

 

The MOSFET features a maximum continuous drain current of 30.8A at ambient temperature and a maximum Rds On of 109mOhm at 15.4A and 10V gate drive voltage. The gate threshold voltage is 4.5V at 1.5mA. It has a maximum power dissipation of 240W (Tc) and an operating temperature range up to 150°C (TA).

 

Key electrical characteristics include an input capacitance (Ciss) of 3000pF at 300V and a gate charge (Qg) of 105nC at 10V. The technology used is MOSFET (Metal Oxide).

 

This component is suitable for various power switching applications where high voltage and current handling are required in a compact surface mount form factor.

TK31V60W5,LVQ Quick Information

Product Type: MOSFET
Canonical Name: TK31V60W5,LVQ N-Channel MOSFET
Subcategory: Single

TK31V60W5,LVQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK31V60W5,LVQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK31V60W5,LVQ Features

  • 600V drain-source voltage rating.
  • 30.8A maximum continuous drain current.
  • 109mOhm maximum Rds On.
  • Surface mount 4-DFN-EP package.
  • 150°C maximum operating temperature.

TK31V60W5,LVQ Applications

  • Power supply switching applications.
  • Motor control circuits.
  • High voltage DC-DC converters.
  • General purpose power switching.

TK31V60W5,LVQ FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the TK31V60W5,LVQ?

The drain-to-source voltage (Vdss) is 600V.

What is the maximum continuous drain current?

The maximum continuous drain current is 30.8A.

What is the Rds On for this MOSFET?

The Rds On is a maximum of 109mOhm at 15.4A and 10V gate drive voltage.

What is the package type for the TK31V60W5,LVQ?

It is a surface mount device in a 4-VSFN Exposed Pad package, also referred to as 4-DFN-EP (8x8).

What is the operating temperature range?

The operating temperature is up to 150°C (TA).

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