| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,500 pcs
|
72500 pcs | On Request | 1 | On Request | On Request | 1427+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TK31V60W,LVQ is an N-Channel MOSFET belonging to the Transistors - FETs, MOSFETs - Single category. It features a high drain-source voltage (Vdss) of 600V and can handle a continuous drain current (Id) of 30.8A at a case temperature (Tc) of 25°C. The on-state resistance (Rds On) is a maximum of 98mOhm at 15.4A and 10V gate-source voltage.
The MOSFET has a maximum power dissipation of 240W (Tc) and an operating junction temperature range of 150°C. Key electrical parameters include an input capacitance (Ciss) of 3000pF at 300V and a gate charge (Qg) of 86nC at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 3.7V at 1.5mA, with a maximum gate-source voltage (Vgs) of ±30V.
Packaged in a 4-VSFN Exposed Pad (4-DFN-EP 8x8) with surface mount technology, this component is suitable for various power management applications. It operates at a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600V.
The recommended gate drive voltage for achieving maximum Rds(on) is 10V.
It comes in a 4-VSFN exposed pad package, supplier device package 4-DFN-EP (8x8).
The maximum operating junction temperature is 150°C.
Maximum on-resistance is 98 mOhm at Vgs=10V and Id=15.4A.
The maximum gate charge is 86 nC at 10V gate-source voltage.