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TK31N60X,S1F The Toshiba TK31N60X,S1F is an N-Channel MOSFET with a 600V drain-source voltage and 30.8A continuous drain current. It is housed in a TO-247 package.
Mfr Part #:

TK31N60X,S1F

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK31N60X,S1F is an N-Channel MOSFET with a 600V drain-source voltage and 30.8A continuous drain current. It is housed in a TO-247 package.
✓ Total Stock: 1,500 pcs
$ Price Range: $2.56

TK31N60X,S1F Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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1,500 pcs
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TK31N60X,S1F Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TK31N60X,S1F Description

Short technical summary and product information.

The Toshiba TK31N60X,S1F is a high-performance N-Channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 30.8A at 25°C ambient temperature.

 

This MOSFET offers a low on-resistance (Rds On) of 88mOhm at 9.4A and 10V gate drive voltage, contributing to efficient power transfer. The gate charge (Qg) is 65nC maximum at 10V, and the input capacitance (Ciss) is 3000pF maximum at 300V.

 

With a maximum power dissipation of 230W at 25°C case temperature, the TK31N60X,S1F is suitable for demanding applications. It operates at temperatures up to 150°C (TJ) and is mounted via a through-hole configuration in a TO-247-3 package.

 

The device utilizes MOSFET (Metal Oxide) technology and has a gate threshold voltage (Vgs(th)) of 3.5V maximum at 1.5mA. The maximum gate-source voltage (Vgs) is ±30V.

TK31N60X,S1F Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TK31N60X,S1F N-Channel MOSFET
Subcategory: N-Channel

TK31N60X,S1F Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK31N60X,S1F Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK31N60X,S1F Features

  • 600V drain-source voltage rating.
  • 30.8A continuous drain current.
  • Low 88mOhm maximum on-resistance.
  • 230W maximum power dissipation.
  • TO-247 package with through-hole mounting.

TK31N60X,S1F Applications

  • Suitable for high-voltage power applications.
  • Used in power supply switching circuits.
  • Ideal for motor control applications.
  • Applicable in industrial power systems.

TK31N60X,S1F FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the TK31N60X,S1F MOSFET?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current rating of the TK31N60X,S1F?

The continuous drain current (Id) is 30.8A.

What is the on-resistance of the TK31N60X,S1F MOSFET?

The maximum on-resistance (Rds On) is 88mOhm at 9.4A and 10V gate drive.

What is the operating temperature range for the TK31N60X,S1F?

The operating junction temperature (TJ) is up to 150°C.

What package type is the TK31N60X,S1F MOSFET supplied in?

The MOSFET is supplied in a TO-247-3 package.

How is the TK31N60X,S1F MOSFET mounted?

It is mounted using a through-hole method.

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