| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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445 pcs
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445 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Toshiba TK31N60W5 is an N-Channel Silicon Power MOSFET utilizing DTMOS technology. It is designed for applications such as switching voltage regulators.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 30.8A at 25℃. The device features a low drain-source on-resistance (RDS(ON)) of 0.082 Ω (typ.) and a fast reverse recovery time (trr) of 135 ns (typ.). The threshold voltage (Vth) ranges from 3V to 4.5V.
Absolute maximum ratings specify a channel temperature (Tch) up to 150℃ and a storage temperature range of -55℃ to 150℃. The thermal resistance from channel to case (Rth(ch-c)) is 0.543 ℃/W.
This MOSFET comes in a TO-247 package with through-hole mounting. It is suitable for applications requiring efficient power switching and voltage regulation.
The maximum drain-source voltage is 600 V.
The typical drain-source on-resistance is 0.082 Ω.
The TK31N60W5 comes in a TO-247 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.