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TK2Q60D(Q) The Toshiba TK2Q60D(Q) is an N-Channel MOSFET designed for switching regulator applications. It offers a 600V drain-source voltage and 2A continuous drain current.
Mfr Part #:

TK2Q60D(Q)

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK2Q60D(Q) is an N-Channel MOSFET designed for switching regulator applications. It offers a 600V drain-source voltage and 2A continuous drain current.
✓ Total Stock: 3,000 pcs
$ Price Range: $2.56

TK2Q60D(Q) Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request 17+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TK2Q60D(Q) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TK2Q60D(Q) Description

Short technical summary and product information.

The Toshiba TK2Q60D(Q) is a silicon N-channel MOS type field-effect transistor designed for switching regulator applications. It features a low drain-source ON-resistance of 3.2 Ω (typ.) and a high forward transfer admittance of 1.0 S (typ.). The device has a drain-source voltage rating of 600V and a continuous drain current of 2A.

 

Key electrical characteristics include a gate threshold voltage ranging from 2.4V to 4.4V and a total gate charge of 7 nC. The MOSFET is housed in a PW-MOLD2 package and supports through-hole mounting.

 

With a maximum channel temperature of 150°C and a power dissipation of 60W (Tc), this MOSFET is suitable for various power switching applications. Its low leakage current and fast switching times contribute to efficient operation.

TK2Q60D(Q) Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TK2Q60D(Q) N-Channel MOSFET
Subcategory: Single

TK2Q60D(Q) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK2Q60D(Q) Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK2Q60D(Q) Features

  • N-Channel MOSFET for switching regulators.
  • 600V Drain-Source Voltage.
  • 2A Continuous Drain Current.
  • Low ON-resistance: 3.2 Ω typical.
  • PW-MOLD2 package, through-hole mount.

TK2Q60D(Q) Applications

  • Suitable for power switching applications.
  • Used in AC-DC converters.
  • Ideal for motor drive circuits.
  • Applicable for lighting ballasts.

TK2Q60D(Q) FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of TK2Q60D(Q)?

600 V.

What package does the TK2Q60D(Q) come in?

TO-251AA through-hole package (supplier device package PW-MOLD2).

What is the operating junction temperature range?

-55°C to 150°C.

What is the typical on-resistance (RDS(on))?

3.2 Ω at VGS = 10 V, ID = 1 A.

What is the total gate charge (Qg) value?

7 nC at VDD ≈ 400 V, VGS = 10 V, ID = 2 A.

What are the switching times for this MOSFET?

Rise time: 15 ns, fall time: 7 ns, turn-on time: 35 ns, turn-off time: 55 ns.

What is the avalanche energy rating?

Single pulse avalanche energy: 101 mJ; repetitive avalanche energy: 6.0 mJ.

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