| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25,000 pcs
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25000 pcs | On Request | 1 | On Request | On Request | 1839+ | On Request | On Request |
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This Toshiba TK2P60D(TE16L1,NQ) is an N-Channel MOSFET with a maximum drain-source voltage of 600V and a continuous drain current of 2A at ambient temperature.
Key electrical characteristics include a maximum on-resistance of 4.3 Ohms at 1A and 10V, an input capacitance of 280pF at 25V, and a gate charge of 7nC at 10V. The gate threshold voltage is a maximum of 4.4V at 1mA, and the maximum gate-to-source voltage is ±30V.
This MOSFET utilizes Metal Oxide technology and is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount configuration. It has a maximum power dissipation of 60W at case temperature and an operating temperature range up to 150°C.
The device is RoHS3 compliant and has a Moisture Sensitivity Level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 600V.
The continuous drain current is 2A.
The maximum on-resistance is 4.3 Ohms at 1A and 10V.
It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The operating temperature range is up to 150°C.
Yes, it is RoHS3 Compliant.