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90 pcs
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90 pcs | On Request | 1 | On Request | On Request | 1426+ | On Request | On Request |
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The Toshiba TK2P60D(TE16L1) is an N-channel power MOSFET built on the π-MOSVII generation process. It is rated for a maximum drain-source voltage of 600V and a continuous drain current of 2A. The device features a maximum gate-source voltage of ±30V and a typical gate threshold voltage of 4.4V. With a maximum drain-source on-resistance of 4.3Ω at VGS=10V, it offers efficient switching performance.
The MOSFET provides a maximum power dissipation of 60W with a typical input capacitance of 280pF and a typical gate charge of 7nC at VGS=10V. It is supplied in a New PW-Mold package and is packaged on tape.
This component is suited for general-purpose switching applications where moderate voltage and current handling, low on-resistance, and high input impedance are required. The single internal connection simplifies design integration.