TK28A65W,S5X The Toshiba TK28A65W,S5X is an N-Channel MOSFET designed for switching voltage regulators. It offers a 650V drain-source voltage and a low on-resistance.
Mfr Part #:

TK28A65W,S5X

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK28A65W,S5X is an N-Channel MOSFET designed for switching voltage regulators. It offers a 650V drain-source voltage and a low on-resistance.
✓ Total Stock: 30 pcs
$ Price Range: $2.56

TK28A65W,S5X Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
30 pcs
30 pcs On Request 1 On Request On Request 15+ On Request On Request

TK28A65W,S5X Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

TK28A65W,S5X Description

Short technical summary and product information.

The Toshiba TK28A65W,S5X is an N-Channel Silicon MOSFET utilizing the DTMOS Super Junction Structure. This device is designed for applications such as switching voltage regulators.

 

Key electrical characteristics include a drain-source voltage (Vdss) of 650V and a continuous drain current of 27.6A. The MOSFET features a low drain-source on-resistance (RDS(ON)) of 0.094 Ω (typ.) and a gate threshold voltage (Vth) ranging from 2.5V to 3.5V. The gate charge (Qg) is 75 nC (max) at 10V, and the input capacitance (Ciss) is 3000 pF (max) at 300V.

 

With a maximum channel temperature of 150°C and a power dissipation of 45W (Tc), this MOSFET is suitable for demanding applications. The device operates within a storage temperature range of -55°C to 150°C and has an isolation voltage of 2000V (RMS).

 

The TK28A65W,S5X comes in a TO-220SIS package, designed for through-hole mounting. Its features make it an efficient component for power management circuits.

TK28A65W,S5X Quick Information

Product Type: MOSFET
Canonical Name: Toshiba TK28A65W,S5X N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

TK28A65W,S5X Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK28A65W,S5X Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK28A65W,S5X Features

  • 650V drain-source voltage rating.
  • Low 0.094 Ohm typical on-resistance.
  • Easy to control gate switching.
  • TO-220SIS package for through-hole mounting.
  • Suitable for switching voltage regulators.

TK28A65W,S5X Applications

  • Power supply switching circuits.
  • Motor control applications.
  • Inverter and converter designs.
  • High-voltage DC-DC converters.

TK28A65W,S5X FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the TK28A65W,S5X?

650V.

What is the continuous drain current rating?

27.6A.

What package type is the TK28A65W,S5X available in?

TO-220-3 Full Pack (TO-220SIS).

What is the operating temperature range?

Channel temperature up to 150°C, storage temperature from -55°C to 150°C.

What is the gate threshold voltage?

Maximum 3.5V at 1.6mA.

What is the on-resistance of this MOSFET?

Typical 0.094 Ohm, maximum 110 mOhm at 13.8A, 10V.

What is the input capacitance?

Maximum 3000 pF at 300V.

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