| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK28A65W,S5X is an N-Channel Silicon MOSFET utilizing the DTMOS Super Junction Structure. This device is designed for applications such as switching voltage regulators.
Key electrical characteristics include a drain-source voltage (Vdss) of 650V and a continuous drain current of 27.6A. The MOSFET features a low drain-source on-resistance (RDS(ON)) of 0.094 Ω (typ.) and a gate threshold voltage (Vth) ranging from 2.5V to 3.5V. The gate charge (Qg) is 75 nC (max) at 10V, and the input capacitance (Ciss) is 3000 pF (max) at 300V.
With a maximum channel temperature of 150°C and a power dissipation of 45W (Tc), this MOSFET is suitable for demanding applications. The device operates within a storage temperature range of -55°C to 150°C and has an isolation voltage of 2000V (RMS).
The TK28A65W,S5X comes in a TO-220SIS package, designed for through-hole mounting. Its features make it an efficient component for power management circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
27.6A.
TO-220-3 Full Pack (TO-220SIS).
Channel temperature up to 150°C, storage temperature from -55°C to 150°C.
Maximum 3.5V at 1.6mA.
Typical 0.094 Ohm, maximum 110 mOhm at 13.8A, 10V.
Maximum 3000 pF at 300V.