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TK25V60X The Infineon Technologies IRF9Z24NPBF is a P-Channel HEXFET MOSFET with a Drain-Source Voltage of 55V and Continuous Drain Current of 12A. It is supplied in a TO-220AB package.
Mfr Part #:

TK25V60X

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Infineon Technologies IRF9Z24NPBF is a P-Channel HEXFET MOSFET with a Drain-Source Voltage of 55V and Continuous Drain Current of 12A. It is supplied in a TO-220AB package.
✓ Total Stock: 555 pcs

TK25V60X Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
555 pcs
On Request
555 pcs On Request 1 On Request On Request 1444+ On Request On Request
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TK25V60X Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
FET Type
Failure Rate
Gate Charge
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
SVHC Present
Technology
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TK25V60X Description

Short technical summary and product information.

The Infineon Technologies IRF9Z24NPBF is a P-Channel MOSFET from the HEXFET series, designed for various electronic applications. It features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 12A at 25°C. The MOSFET exhibits a maximum On-Resistance (Rds On) of 175mOhm at 7.2A and 10V gate drive.

 

Key electrical characteristics include an input capacitance (Ciss) of 350 pF at 25V and a gate charge (Qg) of 19 nC at 10V. The device operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 45W (Tc). The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA, and the maximum gate-to-source voltage is ±20V.

 

This MOSFET is packaged in a standard TO-220-3 configuration, suitable for through-hole mounting. The packaging is provided in a tube. Environmental compliance includes RoHS3 compliance and an MSL rating of 1 (Unlimited).

TK25V60X Quick Information

Product Type: MOSFET
Series: HEXFET®
Canonical Name: Infineon Technologies IRF9Z24NPBF P-Channel HEXFET MOSFET
Subcategory: P-Channel

TK25V60X Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK25V60X Features

  • P-Channel HEXFET MOSFET technology.
  • 55V Drain-Source Voltage rating.
  • 12A Continuous Drain Current.
  • 175mOhm maximum On-Resistance.
  • TO-220AB through-hole package.

TK25V60X Applications

  • Suitable for high-side load switching circuits.
  • Used in power management and DC-DC converters.
  • Ideal for motor control and solenoid drivers.
  • Applicable in battery protection circuits.
  • Designed for general purpose switching applications.

TK25V60X FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the TK25V60X?

The maximum drain-source voltage is 55V.

What is the package type of the TK25V60X?

The package is TO-220-3.

What is the operating temperature range of the TK25V60X?

The operating junction temperature range is -55°C to 175°C.

What is the continuous drain current rating of the TK25V60X?

The continuous drain current is 12A at 25°C case temperature.

What is the on-resistance of the TK25V60X?

The maximum on-resistance is 175mOhm at Vgs=10V and Id=7.2A.

What is the gate threshold voltage of the TK25V60X?

The maximum gate threshold voltage is 4V at 250µA drain current.

What is the total gate charge of the TK25V60X?

The maximum total gate charge is 19nC at Vgs=10V.

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