| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,501 pcs
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9501 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
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This N-Channel MOSFET from Toshiba, part number TK25E60X5, is designed for power management applications. It offers a high drain-to-source voltage of 600V and a continuous drain current of 25A at 25°C.
The MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and has a low on-resistance (Rds On) of 140mOhm at a gate-source voltage of 10V and drain current of 7.5A. The gate charge is specified at a maximum of 60 nC at 10V.
Packaged in a standard TO-220 through-hole configuration, this component is suitable for various power applications. It has a maximum power dissipation of 180W (Tc) and an operating temperature range up to 150°C (TJ).
The TK25E60X5 is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
600V.
25A at 25°C case temperature.
140mOhm at 7.5A, 10V Vgs.
60nC at 10V.
2400pF at 300V drain-source.
TO-220 through-hole.
180W at case temperature.