| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | 1431+ | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Vgs(th) (Max) @ Id |
The TK25E60X from Toshiba is a high-performance N-Channel MOSFET designed for power management applications. It features a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 25A at 25°C.
This MOSFET offers a maximum on-resistance (Rds On) of 125mOhm at 7.5A and 10V gate-source voltage, with a gate charge (Qg) of 40nC maximum at 10V. The maximum gate-source voltage is ±30V, and the input capacitance (Ciss) is 2400pF maximum at 300V.
With a maximum power dissipation of 180W (Tc) and an operating junction temperature of 150°C, the TK25E60X is suitable for demanding thermal environments. It is housed in a standard TO-220-3 package and is designed for through-hole mounting.
Environmental compliance includes RoHS3 status. The component is rated MSL 1 (Unlimited) and REACH Unaffected.
600V.
TO-220-3.
150°C.
25A at 25°C.
125mOhm maximum at 7.5A, 10V.
40nC maximum at 10V.
180W maximum.