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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 1207+ | On Request | On Request |
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The Toshiba TK25A10K3 is a silicon N-Channel MOS Type (U-MOSIV) field-effect transistor. It is specifically designed for switching regulator applications, offering a low drain-source ON resistance of 31 mΩ (typ.) and a high forward transfer admittance of 50 S (typ.).
Key electrical characteristics include a drain-source breakdown voltage of 100 V and a gate threshold voltage ranging from 2.0 to 4.0 V. The device features a continuous drain current of 25 A and a pulse drain current of 50 A, with a maximum power dissipation of 25 W at 25°C.
Packaged in an SC-67 surface mount case, the TK25A10K3 has a thermal resistance from channel to case of 5.0 °C/W. It operates within a channel temperature range of -55 to 150°C and a storage temperature range of -55 to 150°C. This transistor is an electrostatic sensitive device and should be handled with caution.
The typical drain-source ON resistance (RDS(ON)) for the TK25A10K3 is 31 mΩ at a gate-source voltage of 10 V and a drain current of 12 A.
The maximum drain-source voltage (VDSS) for the TK25A10K3 is 100 V.
The typical forward transfer admittance (|Yfs|) for the TK25A10K3 is 50 S, measured at a drain-source voltage of 10 V and a drain current of 12 A.
The TK25A10K3 is supplied in the SC-67 package.
The channel temperature (Tch) for the TK25A10K3 can operate up to 150°C, and the storage temperature range (Tstg) is -55 to 150°C.