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TK22E10N1,S1X The Toshiba TK22E10N1,S1X is an N-Channel MOSFET with a drain-source voltage of 100V and a continuous drain current of 52A. It features a low on-resistance of 13.8mOhm at 11A, 10V.
Mfr Part #:

TK22E10N1,S1X

Available from 2 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK22E10N1,S1X is an N-Channel MOSFET with a drain-source voltage of 100V and a continuous drain current of 52A. It features a low on-resistance of 13.8mOhm at 11A, 10V.
✓ Total Stock: 2,648 pcs
$ Price Range: $2.56

TK22E10N1,S1X Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,638 pcs
On Request
2638 pcs On Request 1 On Request On Request 1433+ On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
10 pcs
On Request
10 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TK22E10N1,S1X Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TK22E10N1,S1X Description

Short technical summary and product information.

This Toshiba TK22E10N1,S1X is an N-Channel MOSFET designed for power switching applications. It offers a drain-source voltage (Vdss) of 100V and can handle a continuous drain current (Id) of up to 52A at a case temperature (Tc).

 

The MOSFET has a maximum on-resistance (Rds On) of 13.8mOhm when driven at 10V with a drain current of 11A. Key electrical parameters include an input capacitance (Ciss) of 1800pF at 50V and a gate charge (Qg) of 28nC at 10V. The gate threshold voltage (Vgs(th)) is 4V at 300µA, and the maximum gate-source voltage (Vgs) is ±20V.

 

With a maximum power dissipation of 72W (Tc) and an operating junction temperature of up to 150°C, this device is suitable for various power management tasks. It is packaged in a standard TO-220-3 configuration and mounted via through-hole.

 

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These specifications make the TK22E10N1,S1X a robust choice for applications requiring efficient power handling.

TK22E10N1,S1X Quick Information

Product Type: MOSFET
Canonical Name: TK22E10N1,S1X N-Channel MOSFET
Subcategory: Single

TK22E10N1,S1X Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK22E10N1,S1X Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK22E10N1,S1X Features

  • N-Channel MOSFET technology.
  • 100V drain-source voltage rating.
  • 52A continuous drain current.
  • Low 13.8mOhm maximum on-resistance.
  • TO-220 package for through-hole mounting.

TK22E10N1,S1X Applications

  • Suitable for power switching applications.
  • Used in power management circuits.
  • Ideal for high current applications.
  • Designed for efficient power handling.

TK22E10N1,S1X FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

100V.

What is the package type?

TO-220-3 (TO-220).

What is the maximum operating junction temperature?

150°C.

What is the typical gate charge?

28nC at Vgs=10V.

What is the input capacitance?

1800pF at Vds=50V.

What is the gate threshold voltage?

4V at Id=300µA.

What is the on-resistance?

13.8mOhm at Id=11A, Vgs=10V.

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