| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,900 pcs
|
6900 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Mounting Type | |
| Package / Case | |
| SVHC Present |
The Toshiba TK22A60V is a silicon N-channel MOSFET engineered for high-speed power switching applications. This component boasts a high drain-source voltage rating of 600V and a continuous drain current capacity of 22A. It offers a typical on-resistance of 0.19 ohm and a typical gate charge of 40 nC, contributing to efficient power control and reduced energy losses.
The MOSFET is housed in a TO220F package, suitable for through-hole mounting. Its design emphasizes enhanced durability and reliability, ensuring consistent performance across a wide range of temperatures. The TK22A60V is compatible with various high-voltage applications and suitable for a variety of circuits and designs.
Key features include low drain-source on-resistance, high forward transfer admittance, and low leakage current. These characteristics make it suitable for applications such as power supplies, lighting systems, converters and inverters, and motor control circuits. The product complies with industry-standard specifications and meets environmental standards for electronic components.
The maximum drain-source voltage (VDSS) for the TK22A60V is 600V.
The continuous drain current (ID) for the TK22A60V is 22A.
The typical on-resistance (RDS(on)) for the TK22A60V is 0.19 ohm.
The TK22A60V is available in the TO220F package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.