| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,988 pcs
|
5988 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK20V60W,LVQ is an N-Channel MOSFET belonging to the DTMOSIV series. It is designed for power applications requiring high voltage and current handling capabilities. Key electrical specifications include a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C. The on-resistance (Rds On) is specified as a maximum of 170mOhm at 10A and 10V gate-source voltage.
This MOSFET features a maximum power dissipation of 156W (Tc) and operates at temperatures up to 150°C (TJ). The gate charge (Qg) is 48 nC maximum at 10V Vgs, and the input capacitance (Ciss) is 1680 pF maximum at 300V Vds. The gate threshold voltage (Vgs(th)) is a maximum of 3.7V at 1mA, and the maximum gate-source voltage (Vgs) is ±30V.
The device is housed in a surface mount 4-DFN-EP (8x8) package, also referred to as 4-VSFN Exposed Pad. It is suitable for various power management circuits where high efficiency and reliability are required. The RoHS status is compliant with RoHS3 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 600V.
The continuous drain current is 20A at 25°C.
The maximum on-resistance is 170mOhm at 10A drain current and 10V gate-source voltage.
The maximum gate charge is 48nC at 10V gate-source voltage.
The maximum input capacitance is 1680pF at 300V drain-source voltage.
The maximum junction temperature is 150°C.
The device is available in a 4-VSFN exposed pad surface mount package, also known as 4-DFN-EP (8x8).