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TK20V60W The Toshiba TK20V60W is an N-Channel MOSFET designed for power management applications. It features a 600V drain-to-source voltage and a 20A continuous drain current.
Mfr Part #:

TK20V60W

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK20V60W is an N-Channel MOSFET designed for power management applications. It features a 600V drain-to-source voltage and a 20A continuous drain current.
✓ Total Stock: 269 pcs

TK20V60W Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
269 pcs
On Request
269 pcs On Request 1 On Request On Request 1408+ On Request On Request
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TK20V60W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Package / Case
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
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TK20V60W Description

Short technical summary and product information.

The Toshiba TK20V60W is a high-performance N-Channel MOSFET belonging to the DTMOSIV series. It is designed for power management applications requiring robust performance and reliability.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 20A at 25°C. The on-resistance (Rds On) is specified as a maximum of 170mOhm at 10A and 10V gate drive voltage. The gate threshold voltage (Vgs(th)) is a maximum of 3.7V at 1mA, and the maximum gate-source voltage (Vgs) is ±30V. Input capacitance (Ciss) is a maximum of 1680pF at 300V.

 

This MOSFET utilizes Super Junction technology for enhanced performance. It has a maximum power dissipation of 156W (Tc) and an operating junction temperature of up to 150°C. The component is housed in a surface-mount 4-DFN-EP (8x8) package, suitable for various electronic designs.

 

Environmental compliance includes RoHS3 status. The component is supplied in Tape & Reel or Cut Tape packaging, with a standard package quantity of 2500 units.

TK20V60W Quick Information

Product Type: MOSFET
Series: DTMOSIV
Canonical Name: TK20V60W N-Channel MOSFET
Subcategory: N-Channel

TK20V60W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

TK20V60W Features

  • 600V drain-to-source voltage rating.
  • 20A continuous drain current capability.
  • Low 170mOhm maximum on-resistance.
  • Surface mount 4-DFN-EP (8x8) package.
  • Operates up to 150°C junction temperature.

TK20V60W Applications

  • Suitable for power management circuits.
  • Ideal for high voltage applications.
  • Used in discrete power switching.
  • Designed for surface mount assembly.

TK20V60W FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the TK20V60W?

600V.

What is the continuous drain current rating?

20A at 25°C.

What is the on-resistance of the TK20V60W?

170mOhm maximum at 10A and 10V gate drive.

What package is the TK20V60W available in?

4-DFN-EP (8x8) surface-mount package.

What is the maximum operating junction temperature?

150°C.

What is the gate threshold voltage of this MOSFET?

3.7V maximum at 1mA drain current.

What is the gate charge of the TK20V60W?

48nC maximum at 10V gate voltage.

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