| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
25 pcs
|
25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Toshiba TK20S04K3L(T6L1,NQ is an N-Channel MOSFET designed for various power applications. It offers a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current of 20A at ambient temperature.
The MOSFET features a low on-resistance (Rds On) of 14mOhm at 10A and 10V, with a gate threshold voltage (Vgs(th)) of 3V at 1mA. The maximum gate-to-source voltage is ±20V, and input capacitance (Ciss) is 820pF at 10V. Gate charge (Qg) is 18nC at 10V.
With a maximum power dissipation of 38W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this device is suitable for demanding environments. The technology employed is MOSFET (Metal Oxide).
The component is packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 (DPAK+) package, designed for surface mounting. It has a RoHS3 compliant status and Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V
20A at ambient temperature.
14mOhm at Id=10A and Vgs=10V.
18nC at Vgs=10V.
820pF at Vds=10V.
TO-252-3, DPak (2 leads and tab), SC-63 surface mount package.
175°C.