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22,999 pcs
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22999 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Toshiba TK20J50D(F) is an N-Channel MOSFET designed for power applications. It features a high drain-source voltage rating of 500V and a power dissipation of 280W, making it suitable for various switching and amplification tasks.
This MOSFET is manufactured by Toshiba and is classified under the N-Silicon type. It is supplied in a Tube package, which is a standard packaging method for discrete components.
The TK20J50D(F) is RoHS3 Compliant, indicating adherence to certain environmental standards. While specific details on operating voltage, continuous drain current, and on-resistance are not provided in the available data, its core specifications suggest suitability for power electronics designs requiring robust voltage handling capabilities.
The drain-source voltage (Vds) is 500V.
The power dissipation (Pd) is 280W.
It is an N-Channel MOSFET made of N-Silicon.
The TK20J50D(F) MOSFET is supplied in Tube packaging.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.