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TK20C60W The Toshiba TK20C60W is an N-Channel MOSFET with a 600V drain-to-source voltage and 20A continuous drain current. It is designed for through-hole mounting in an I2PAK package.
Mfr Part #:

TK20C60W

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK20C60W is an N-Channel MOSFET with a 600V drain-to-source voltage and 20A continuous drain current. It is designed for through-hole mounting in an I2PAK package.
✓ Total Stock: 104 pcs

TK20C60W Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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104 pcs
On Request
104 pcs On Request 1 On Request On Request 1016+ On Request On Request
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TK20C60W Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Package / Case
Power Dissipation
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Vgs(th) (Max) @ Id
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TK20C60W Description

Short technical summary and product information.

The Toshiba TK20C60W is a high-performance N-Channel MOSFET from the DTMOSIV series. It features a maximum drain-to-source voltage (Vdss) of 600V and can handle a continuous drain current (Id) of 20A at 25°C.

 

Key electrical specifications include a maximum on-resistance (Rds On) of 155mOhm at 10A and 10V, a gate threshold voltage (Vgs(th)) of 3.7V at 1mA, and a maximum gate charge (Qg) of 48nC at 10V. The device supports a gate-source voltage (Vgs) up to ±30V and has an input capacitance (Ciss) of 1680pF at 300V.

 

With a maximum power dissipation of 165W (Tc) and an operating temperature up to 150°C (TJ), this MOSFET is suitable for demanding applications. It is housed in an I2PAK package (TO-262-3 Long Leads, I²Pak, TO-262AA) and is designed for through-hole mounting.

 

This component is part of Toshiba's DTMOSIV series, known for its MOSFET technology.

TK20C60W Quick Information

Product Type: MOSFET
Series: DTMOSIV
Canonical Name: Toshiba TK20C60W N-Channel MOSFET
Subcategory: FETs, MOSFETs - Single

TK20C60W Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

TK20C60W Features

  • 600V drain-to-source voltage.
  • 20A continuous drain current.
  • 155mOhm maximum on-resistance.
  • 150°C maximum operating temperature.
  • I2PAK package for through-hole mounting.

TK20C60W Applications

  • Suitable for power switching circuits.
  • Used in high-voltage applications.
  • Ideal for power supply designs.
  • Component in motor control systems.

TK20C60W FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage (Vdss) for the TK20C60W?

The maximum drain-to-source voltage is 600V.

What is the continuous drain current (Id) at 25°C?

The continuous drain current is 20A at 25°C.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum on-resistance is 155mOhm at 10A drain current and 10V gate-source voltage.

What is the operating temperature range for the TK20C60W?

The operating temperature is up to 150°C.

What package type is the TK20C60W supplied in?

The TK20C60W is supplied in an I2PAK package, also known as TO-262-3 Long Leads, I²Pak, TO-262AA.

How is the TK20C60W mounted?

The TK20C60W is designed for through-hole mounting.

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