| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9,000 pcs
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9000 pcs | On Request | 1 | On Request | On Request | 2015+ | On Request | On Request |
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The Toshiba TK20A60W is a silicon N-Channel MOSFET utilizing DTMOS technology, designed for applications such as switching voltage regulators. It offers a drain-source breakdown voltage of 600V and a continuous drain current of 20A.
Key electrical characteristics include a low typical drain-source on-resistance of 0.13 Ohms and a gate-source threshold voltage ranging from 2.7V to 3.7V. The device also features a gate charge of 48 nC and input capacitance of 1680 pF.
Packaged in a TO-220SIS through-hole package, the TK20A60W has a maximum channel temperature rating of 150°C and a storage temperature range of -55°C to 150°C. Its thermal resistance from channel to case is 2.78 °C/W.
This MOSFET is suitable for power supply designs requiring efficient switching and high voltage handling capabilities.
The drain-source breakdown voltage is 600V.
The continuous drain current is 20A.
The typical drain-source on-resistance is 0.13 Ohms.
The gate-source threshold voltage is between 2.7V and 3.7V.
The TK20A60W is supplied in a TO-220SIS package.
The maximum channel temperature is 150°C.