| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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940 pcs
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940 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The TK17E80W from Toshiba Semiconductor and Storage is an N-Channel MOSFET belonging to the DTMOSIV series. This component is designed for power management applications, offering a drain-to-source voltage of 800 V and a continuous drain current of 17A at 25°C.
Key electrical characteristics include a maximum Rds On of 290mOhm at 8.5A and 10V, a gate charge of 32 nC at 10V, and a gate-to-source voltage limit of ±20V. The input capacitance is rated at a maximum of 2050 pF at 300V. The device operates at temperatures up to 150°C and has a maximum power dissipation of 180W.
This MOSFET is housed in a TO-220 package and utilizes a through-hole mounting type, making it suitable for various circuit designs. The technology employed is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).
Environmental compliance includes RoHS3 status. The product is classified under ECCN EAR99 and HTSUS 8541.29.0095.
800 V
17 A at 25°C
290 mOhm maximum at 8.5A and 10V
TO-220-3 (through-hole)
150°C
32 nC maximum at 10 V
180 W