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TK16J60W,S1VQ The Toshiba TK16J60W,S1VQ is an N-Channel MOSFET with a 600V Drain-Source Voltage and 15.8A current rating. It is housed in a TO-3P package.
Mfr Part #:

TK16J60W,S1VQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK16J60W,S1VQ is an N-Channel MOSFET with a 600V Drain-Source Voltage and 15.8A current rating. It is housed in a TO-3P package.
✓ Total Stock: 220 pcs
$ Price Range: $2.56

TK16J60W,S1VQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
220 pcs
On Request
220 pcs On Request 1 On Request On Request 13+ On Request On Request
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TK16J60W,S1VQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TK16J60W,S1VQ Description

Short technical summary and product information.

The Toshiba TK16J60W,S1VQ is a single N-Channel MOSFET designed for power applications. It features a maximum Drain-Source Voltage (Vdss) of 600V and a continuous current rating of 15.8A at a case temperature (Tc).

 

Key electrical characteristics include a maximum Rds On of 190mOhm at 7.9A and 10V, a gate charge (Qg) of 38nC at 10V, and an input capacitance (Ciss) of 1350pF at 300V. The gate threshold voltage (Vgs(th)) is a maximum of 3.7V at 790µA, with a maximum gate-source voltage (Vgs) of ±30V.

 

This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 130W (Tc). It is mounted via a through-hole method and comes in a TO-3P-3, SC-65-3 package.

 

The TK16J60W,S1VQ is manufactured by Toshiba and is part of the MOSFET technology family.

TK16J60W,S1VQ Quick Information

Product Type: MOSFET
Canonical Name: TK16J60W,S1VQ N-Channel MOSFET
Subcategory: Single

TK16J60W,S1VQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK16J60W,S1VQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK16J60W,S1VQ Features

  • N-Channel MOSFET technology.
  • 600V maximum Drain-Source Voltage.
  • 15.8A continuous current rating.
  • TO-3P through-hole package.
  • 150°C maximum operating temperature.

TK16J60W,S1VQ Applications

  • Power supply circuits.
  • Switching power applications.
  • Motor control systems.
  • General purpose power switching.

TK16J60W,S1VQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the TK16J60W,S1VQ?

The maximum drain-to-source voltage is 600V.

What package options are available for the TK16J60W,S1VQ?

The device is available in a TO-3P-3 / SC-65-3 package, also supplied as TO-3P(N), with through-hole mounting.

What is the maximum junction temperature?

The maximum junction temperature is 150°C.

What is the continuous drain current rating?

The continuous drain current is 15.8A at ambient temperature (Ta).

What is the maximum drain-source on-resistance?

The maximum on-resistance is 190mOhm at 7.9A drain current and 10V gate-source voltage.

What is the maximum gate-source voltage?

The maximum gate-source voltage is ±30V.

What is the maximum gate charge?

The maximum gate charge is 38nC at 10V gate-source voltage.

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