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TK16J55D(F) The Toshiba TK16J55D(F) is an N-Channel MOSFET designed for switching regulator applications. It features a 550V drain-source voltage and a 16A drain current.
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TK16J55D(F)

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK16J55D(F) is an N-Channel MOSFET designed for switching regulator applications. It features a 550V drain-source voltage and a 16A drain current.
✓ Total Stock: 60 pcs

TK16J55D(F) Available from 1 distributor

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Optech Co.,Limited ✓
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60 pcs
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60 pcs On Request 1 On Request On Request 13+ On Request On Request
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TK16J55D(F) Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TK16J55D(F) Description

Short technical summary and product information.

The Toshiba TK16J55D(F) is a high-performance N-Channel MOSFET belonging to the π-MOSⅦ generation. It is designed for use in switching regulator applications, offering a drain-source voltage of 550V and a continuous drain current of 16A. The device has a maximum power dissipation of 250W and a low on-resistance of 370mΩ at a gate-source voltage of 10V.

 

This MOSFET is housed in a TO-3P(N) package, suitable for through-hole mounting. Its electrical characteristics include a gate threshold voltage of up to 4V and a typical input capacitance of 2300pF. The typical gate charge is 40nC, facilitating efficient switching.

 

Key electrical parameters include a maximum gate-source voltage of ±30V. The TK16J55D(F) is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for a wide range of environmental conditions. Its robust design makes it a reliable choice for power management circuits.

TK16J55D(F) Quick Information

Product Type: MOSFET
Series: π-MOSⅦ
Canonical Name: TK16J55D(F) N-Channel MOSFET
Subcategory: N-Channel

TK16J55D(F) Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK16J55D(F) Features

  • 550V drain-source voltage rating.
  • 16A continuous drain current capability.
  • Low 370mΩ maximum on-resistance.
  • 250W maximum power dissipation.
  • TO-3P(N) through-hole package.

TK16J55D(F) Applications

  • Ideal for switching regulator circuits.
  • Suitable for power supply applications.
  • Used in general purpose power switching.

TK16J55D(F) FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the TK16J55D(F)?

The maximum drain-source voltage (Vdss) for the TK16J55D(F) is 550V.

What is the continuous drain current of the TK16J55D(F) MOSFET?

The TK16J55D(F) MOSFET has a continuous drain current (Id) of 16A.

What is the maximum power dissipation for the TK16J55D(F)?

The maximum power dissipation (Pd) for the TK16J55D(F) is 250W.

What is the typical on-resistance of the TK16J55D(F) at VGS=10V?

The typical drain-source on-resistance (Rds(on)) for the TK16J55D(F) at VGS=10V is 370mΩ.

What package type is the TK16J55D(F) MOSFET supplied in?

The TK16J55D(F) MOSFET is supplied in a TO-3P(N) package.

What is the RoHS status of the TK16J55D(F)?

The TK16J55D(F) is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TK16J55D(F)?

The Moisture Sensitivity Level (MSL) for the TK16J55D(F) is 1 Unlimited.

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