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TK16H60C The Toshiba TK16H60C is an N-Channel MOSFET designed for switching regulator applications. It offers low drain-source ON resistance and high forward transfer admittance.
Mfr Part #:

TK16H60C

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK16H60C is an N-Channel MOSFET designed for switching regulator applications. It offers low drain-source ON resistance and high forward transfer admittance.
✓ Total Stock: 8,000 pcs

TK16H60C Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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8,000 pcs
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8000 pcs On Request 1 On Request On Request 08+ On Request On Request
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TK16H60C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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TK16H60C Description

Short technical summary and product information.

The Toshiba TK16H60C is a silicon N-Channel MOS Type (π-MOS VI) Field Effect Transistor. It is specifically designed for switching regulator applications, offering efficient power control.

 

Key electrical characteristics include a low drain-source ON resistance (RDS(ON)) of 0.32Ω typical and a high forward transfer admittance (|Yfs|) of 11S typical. The device features a breakdown voltage of 600V and a maximum continuous drain current of 15A. Its power dissipation is rated at 150W.

 

The TK16H60C operates as an enhancement mode transistor. It exhibits low leakage current, with a static drain current (IDSS) of 100μA maximum at 600V. The gate-source threshold voltage (Vth) ranges from 2.0V to 4.0V.

 

This MOSFET is suitable for applications requiring fast switching, with typical switching times of 50 ns and 60 ns. Its robust design and specifications make it a reliable component for power supply circuits and other demanding electronic systems.

TK16H60C Quick Information

Product Type: MOSFET
Series: TK
Canonical Name: Toshiba TK16H60C N-Channel MOSFET
Subcategory: N-Channel

TK16H60C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TK16H60C Features

  • N-Channel MOSFET for switching regulators.
  • 600V drain-source breakdown voltage.
  • Low 0.32Ω typical ON resistance.
  • High 11S typical transconductance.
  • 150W power dissipation rating.

TK16H60C Applications

  • Ideal for switching regulator circuits.
  • Used in power supply designs.
  • Suitable for high-voltage applications.
  • Efficient power control applications.

TK16H60C FAQs

6 frequently asked questions generated from this part’s specifications.
What is the typical drain-source ON resistance for the TK16H60C?

The typical drain-source ON resistance for the TK16H60C is 0.32Ω.

What is the breakdown voltage of the TK16H60C MOSFET?

The drain-source breakdown voltage of the TK16H60C is 600V.

What are the typical switching times for the TK16H60C?

The typical switching times for the TK16H60C are 50 ns and 60 ns.

What is the power dissipation of the TK16H60C?

The power dissipation of the TK16H60C is 150W.

What is the RoHS status of the TK16H60C?

The TK16H60C is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the TK16H60C?

The Moisture Sensitivity Level (MSL) for the TK16H60C is 1 Unlimited.

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