| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | 1513+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET, part number TK16A60W,S4VX from Toshiba, is designed for robust performance in electronic circuits. It features a high drain-to-source voltage rating of 600V and can handle a continuous drain current of 15.8A under typical conditions.
The device utilizes MOSFET technology with a metal oxide semiconductor structure. Key electrical characteristics include a maximum Rds On of 190mOhm at 7.9A and 10V gate drive, with a gate threshold voltage of 3.7V at 790µA. The maximum gate-source voltage is ±30V.
Packaged in a TO-220SIS configuration, this component is designed for through-hole mounting. It operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 40W. The TK16A60W,S4VX is specified with RoHS3 compliance and an MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V
15.8A at ambient temperature
TO-220-3 Full Pack (TO-220SIS)
150°C (junction)
190mOhm at Id=7.9A, Vgs=10V
38nC at Vgs=10V
1350pF at Vds=300V