| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,347 pcs
|
1347 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK15A60U(STA4,Q,M) is an N-Channel power MOSFET with a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 15A. It offers a low on-resistance (Rds On) of 300mOhm at 7.5A and 10V gate-source voltage, with a maximum gate charge (Qg) of 17nC at 10V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 40W (Tc). It utilizes Metal Oxide Semiconductor (MOSFET) technology and is suitable for through-hole mounting in a TO-220SIS package.
Key electrical characteristics include an input capacitance (Ciss) of 950pF at 10V and a gate threshold voltage (Vgs(th)) of 5V at 1mA. The maximum gate-source voltage is ±30V.
This component is designed for various power supply and motor driver applications, leveraging its high voltage and current capabilities within a standard TO-220 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
15A (at Ta).
300mOhm maximum at 7.5A, 10V.
TO-220-3 Full Pack (TO-220SIS).
150°C.
17nC at 10V.
950pF.