| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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60 pcs
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60 pcs | On Request | 1 | On Request | On Request | 1445+ | On Request | On Request |
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The Toshiba TK14C65W is an N-Channel MOSFET belonging to the DTMOSIV series. It offers a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) of 13.7A at 25°C. The on-resistance (Rds(on)) is specified at a maximum of 250mOhm at 6.9A and 10V gate-source voltage.
This MOSFET features a maximum power dissipation of 130W (Tc) and an operating temperature range up to 150°C (Tj). Key electrical parameters include a gate-source threshold voltage (Vgs(th)) of 3.5V at 690µA and a maximum gate-source voltage (Vgs) of ±30V. Input capacitance (Ciss) is 1300pF at 300V, and gate charge (Qg) is 35nC at 10V.
The component is housed in an I2PAK package (TO-262-3 Long Leads, I²Pak, TO-262AA) and is designed for through-hole mounting. Its technology is based on Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) principles.
The maximum drain-source voltage (Vds) for the TK14C65W is 650V.
The continuous drain current (Id) of the TK14C65W at 25°C is 13.7A.
The maximum on-resistance (Rds(on)) for the TK14C65W is 250mOhm at 6.9A and 10V.
The TK14C65W has a maximum operating temperature (Tj) of 150°C.
The TK14C65W is available in an I2PAK package (TO-262-3 Long Leads, I²Pak, TO-262AA) and is designed for through-hole mounting.