| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
28,500 pcs
|
28500 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Mounting Type | |
| Package / Case | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology |
The Toshiba TK14A45DA is a high-performance N-Channel MOSFET designed for various power management applications. It features a maximum Drain to Source Voltage (Vdss) of 450V and a continuous Drain Current (Id) of 13.5A at 25°C. The on-resistance (Rds On) is specified as a maximum of 410mOhm at 6.8A and 10V.
This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology and comes in a TO-220SIS package, suitable for through-hole mounting. Its robust construction and electrical characteristics make it a reliable component for power switching and amplification circuits.
Key electrical parameters include a 450V Vdss rating and a 13.5A Id rating, ensuring it can handle demanding power requirements. The TO-220-3 Full Pack case style is common in power electronics for its thermal dissipation capabilities and ease of assembly.
Environmental compliance information indicates RoHS3 compliance, MSL 1 Unlimited, and REACH Unaffected status, though these are noted with low confidence due to verification status.
The Drain to Source Voltage (Vdss) for the TK14A45DA is 450 V.
The continuous drain current (Id) at 25°C for the TK14A45DA is 13.5 A.
The maximum on-resistance (Rds On) is 410 mOhm at 6.8A, 10V.
The TK14A45DA is an N-Channel FET.
The TK14A45DA uses MOSFET (Metal Oxide) technology.
The TK14A45DA is mounted using the Through Hole method.
The supplier device package is TO-220SIS, and the package/case is TO-220-3 Full Pack.