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TK13P25D,RQ The Toshiba TK13P25D,RQ is an N-Channel MOSFET designed for switching voltage regulators. It features a 250V drain-source voltage and a 13A continuous drain current.
Mfr Part #:

TK13P25D,RQ

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TK13P25D,RQ is an N-Channel MOSFET designed for switching voltage regulators. It features a 250V drain-source voltage and a 13A continuous drain current.
✓ Total Stock: 20,500 pcs
$ Price Range: $2.56

TK13P25D,RQ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
20,500 pcs
On Request
20500 pcs On Request 1 On Request On Request 16+PBF On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

TK13P25D,RQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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TK13P25D,RQ Description

Short technical summary and product information.

The Toshiba TK13P25D,RQ is a silicon N-Channel Power MOSFET designed for applications such as switching voltage regulators. It offers a low drain-source on-resistance of 0.19 Ω (typ.) and a low leakage current of 10 µA (max) at 250V.

 

Key electrical characteristics include a drain-source voltage (Vdss) of 250V, a continuous drain current (ID) of 13A, and a maximum power dissipation (PD) of 96W. The gate threshold voltage (Vgs(th)) ranges from 1.5V to 3.5V at 1mA. The Rds On is a maximum of 250mΩ at 6.5A and 10V gate drive voltage.

 

This MOSFET is available in a surface mount DPAK package (TO-252-3, SC-63). The operating temperature range is -55°C to 150°C, with a channel temperature limit of 150°C. Thermal resistance from channel to case is 1.3 °C/W.

 

It is suitable for various power switching applications where efficiency and reliability are critical.

TK13P25D,RQ Quick Information

Product Type: MOSFET
Canonical Name: TK13P25D,RQ N-Channel MOSFET
Subcategory: N-Channel

TK13P25D,RQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

TK13P25D,RQ Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TK13P25D,RQ Features

  • N-Channel MOSFET for power switching.
  • 250V drain-source voltage rating.
  • 13A continuous drain current.
  • Low on-resistance: 0.19 Ω typical.
  • Surface mount DPAK package.

TK13P25D,RQ Applications

  • Ideal for switching voltage regulators.
  • Suitable for power supply circuits.
  • Used in DC-DC converters.
  • General purpose power switching.

TK13P25D,RQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the TK13P25D,RQ?

250 V.

What is the continuous drain current rating?

13 A at TC = 25°C.

What is the maximum operating temperature?

150 °C.

What package is the TK13P25D,RQ available in?

TO-252-3, DPak (2 Leads + Tab), SC-63 (surface mount, supplier package DPAK).

What is the gate-source voltage rating?

±20 V.

What is the maximum on-resistance?

250 mΩ at ID = 6.5 A, VGS = 10 V.

What is the gate charge at 10V gate drive?

25 nC at VGS = 10 V.

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