| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-21 08:15:08 |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Toshiba TK13E25D,S1X(S is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 13A at 25°C.
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology. Its on-resistance (Rds On) is a maximum of 250mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 6.5A. The gate charge (Qg) is a maximum of 25 nC at 10V Vgs. The maximum gate-source voltage is ±20V.
With a power dissipation rating of 102W (Tc), the TK13E25D,S1X(S is suitable for applications requiring moderate power handling. It operates at temperatures up to 150°C (TJ). The component is mounted via a through-hole method and comes in a TO-220-3 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 250V.
The continuous drain current (Id) at 25°C is 13A.
The maximum on-resistance (Rds on) is 250mOhm at 6.5A and 10V gate drive.
The maximum gate threshold voltage (Vgs(th)) is 3.5V at 1mA drain current.
The operating junction temperature is 150°C.
The device is available in a TO-220-3 through-hole package.
The mounting type is Through Hole.